Successive versions of vertical transistors are emerging as the likely successor to finFETs, combining lower leakage with significant area reduction. A stacked nanosheet transistor, introduced at N3, ...

In the early '90s, many pessimists predicted that CMOS would hit a wall as it approached 100-nm and lower gate lengths toward the end of the century. But CMOS processes steadily marched forward, ...

The mobility of self-assembled monolayer field-effect transistors (SAMFETs) traditionally decreases dramatically with increasing channel length. Recently, however, SAMFETs using liquid-crystalline ...

A layout-dependent circuit-design model from Toshiba helps boost gate density and improve cost-performance in next-generation 45-nm CMOS technology. More specifically, 45-nm CMOS gate density can be 2 ...